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PhysicsES

Current Electricity

Apply concepts from Current Electricity to problem-solving. Focus on numerical practice and real-world applications.

3-4 Qs/year55 minPhase 1 · APPLICATION

Concept Core

Electric current is the rate of flow of charge: I = Q/t, where Q is charge (C) and t is time (s); [I] = [A], SI unit: ampere (A). At the microscopic level, I = neAvd, where n is the number density of free electrons ([n] = [L3L^{-3}], SI unit: /m3m^{3}), e is electron charge, A is the cross-sectional area, and vd is the drift velocity.

Drift velocity is derived from the force on free electrons in an applied electric field: vd = eE τ\tau/m, where E is the electric field, τ\tau is the mean relaxation time ([τ\tau] = [T], SI unit: s), and m is the electron mass.
Numerically, vd is extremely small (~10410^{-4} m/s), yet current appears instantaneous because the electric field propagates at nearly the speed of light; [vd] = [L T1T^{-1}], SI unit: m/s.
Current density J = I/A = nevd = σ\sigma E; [J] = [A L2L^{-2}], SI unit: A/m2m^{2}.

Ohm's law states V = IR, where V is potential difference (volt), I is current (ampere), and R is resistance; [R] = [M L2  T3  A2L^{2} \; T^{-3} \; A^{-2}], SI unit: ohm.
Resistance depends on geometry: R = ρ\rho l/A, where ρ\rho is resistivity ([ρ\rho] = [M L3  T3  A2L^{3} \; T^{-3} \; A^{-2}], SI unit: ohm m) and σ\sigma = 1/ρ\rho is conductivity ([σ\sigma] = [M1  L3  T3  A2M^{-1} \; L^{-3} \; T^{3} \; A^{2}], SI unit: S/m).
Temperature dependence: R = R0R_{0}(1 + α\alpha DeltaT), where α\alpha is the temperature coefficient; for metals α\alpha > 0 (resistance increases with temperature), for semiconductors α\alpha < 0 (resistance decreases).

Power dissipation: P = VI = I2I^{2} R = V2V^{2}/R; [P] = [M L2  T3L^{2} \; T^{-3}], SI unit: watt (W). Use I2I^{2} R when current is known (series circuits), V2V^{2}/R when voltage is known (parallel circuits).

For resistors: Series ReqR_{eq} = R1 + R2 + ... (same current through all, voltage divides). Parallel 1/ReqR_{eq} = 1/R1 + 1/R2 + ... (same voltage across all, current divides). Note: resistor rules are the opposite of capacitor rules.

EMF and internal resistance: A cell provides EMF ϵ\epsilon, and the terminal voltage is V = ϵ\epsilon - Ir, where r is internal resistance.
As current increases, terminal voltage decreases; [ϵ\epsilon] = [M L2  T3  A1L^{2} \; T^{-3} \; A^{-1}], SI unit: volt.

Kirchhoff's laws are the foundation of circuit analysis. The junction rule (sum of currents at a junction = 0) follows from charge conservation. The loop rule (sum of potential changes around a closed loop = 0) follows from energy conservation. Sign convention: traversing a resistor in the direction of current gives -IR; traversing a cell from - to + gives +ϵ\epsilon.

The Wheatstone bridge is balanced when P/Q = R/S, giving zero galvanometer current. At balance, the galvanometer arm can be removed without affecting the circuit. The metre bridge is a practical Wheatstone bridge: R/S = l/(100 - l), where l is the balance length (cm).

The potentiometer uses the principle that potential drop across a uniform wire is proportional to length (V proportional to l for constant current). It measures true EMF because at the null point, no current flows through the test cell.
EMF comparison: ϵ1ϵ2\frac{\epsilon_{1}}{\epsilon_{2}} = l1l2\frac{l_{1}}{l_{2}}.
Internal resistance measurement: r = R(l1l_{1} - l2l_{2})/l2l_{2}.

The key testable concept is Kirchhoff's laws applied to Wheatstone bridge and potentiometer problems, which together contribute the majority of numerical questions from this chapter in NEET.

Solved Numericals

N1. A copper wire of length 2 m and cross-sectional area 1 mm2mm^{2} carries a current of 1 A. Given n = 8.5 x 102810^{28} /m3m^{3} for copper, find the drift velocity.

Given: l = 2 m, A = 1 mm2mm^{2} = 1 x 106  m210^{-6} \; m^{2}, I = 1 A, n = 8.5 x 102810^{28} /m3m^{3}. Using I = neAvd: vd = I/(neA) = 1 A / (8.5 x 102810^{28} /m3m^{3} x 1.6 x 101910^{-19} C x 1 x 106  m210^{-6} \; m^{2}) vd = 1 / (8.5 x 102810^{28} x 1.6 x 101910^{-19} x 10610^{-6}) m/s vd = 1 / (8.5 x 1.6 x 10310^{3}) m/s vd = 1 / (13600) m/s vd = 7.35 x 10510^{-5} m/s ~ 0.074 mm/s.

This confirms drift velocity is extremely small. At this speed, an electron would take 2 m / (7.35 x 10510^{-5} m/s) = 2.72 x 10410^{4} s ~ 7.5 hours to traverse the wire, yet current flows instantly because the electric field signal propagates at nearly c.

N2. In a Wheatstone bridge, P = 100 ohm, Q = 150 ohm, R = 40 ohm. Find S for balanced condition. If the galvanometer and battery are interchanged, is the bridge still balanced?

Balance condition: P/Q = R/S. 100150\frac{100}{150} = 40/S S = 40 x 150100\frac{150}{100} = 60 ohm.

When galvanometer and battery are interchanged, the balance condition P/Q = R/S remains the same (this is the reciprocity theorem for Wheatstone bridge). Therefore, the bridge is still balanced with S = 60 ohm.

N3. A potentiometer wire of length 1 m has a resistance of 10 ohm. It is connected in series with a cell of EMF 2 V (internal resistance 1 ohm) and an external resistance RextR_{ext}. A cell of EMF 1.2 V balances at 60 cm. Find the external resistance.

Current through the potentiometer wire: I = ϵ\epsilon/(RwireR_{wire} + r + RextR_{ext}) = 2/(10 + 1 + RextR_{ext}) A. Potential drop across the wire: VwireV_{wire} = I x RwireR_{wire} = 2 x 10/(11 + RextR_{ext}) V. Potential gradient: k = VwireV_{wire}/L = 20/(11 + RextR_{ext}) V/m. At balance, the EMF of the test cell equals the potential drop across balance length: ϵcell\epsilon_{cell} = k x lbalancel_{balance} 1.2 = [20/(11 + RextR_{ext})] x 0.60 1.2 = 12/(11 + RextR_{ext}) 11 + RextR_{ext} = 121\frac{12}{1}.2 = 10. RextR_{ext} = 10 - 11 = -1.

This gives a negative value, which is physically impossible. Let us re-examine. The potential drop across the full wire must be greater than or equal to the EMF of the cell being balanced. VwireV_{wire} = 20/(11 + RextR_{ext}).
For VwireV_{wire} >= 1.2 V, we need 11 + RextR_{ext} <= 16.67, so RextR_{ext} <= 5.67 ohm. At balance at 60 cm: 1.2 = [20/(11 + RextR_{ext})] x 0.60 1.2(11 + RextR_{ext}) = 12 13.2 + 1.2 RextR_{ext} = 12 1.2 RextR_{ext} = -1.2.

The arithmetic indicates RextR_{ext} should be reconsidered.
The issue is that with the given parameters, the potential gradient across 60 cm with just the wire resistance of 10 ohm and internal resistance of 1 ohm (no external resistance) gives: V across 60 cm = [2/(10+1)] x 10 x 0.6 = 2 x 10 x 0.611\frac{6}{11} = 1211\frac{12}{11} = 1.09 V, which is less than 1.2 V. Hence no balance is possible without reducing total series resistance. Re-reading: the external resistance must be such that we get higher potential gradient.
Actually if RextR_{ext} = 0, V across 60 cm = (211\frac{2}{11}) x 10 x (60100\frac{60}{100}) = 1.09 V < 1.2 V. For balance at 60 cm with 1.2 V, we need the driver cell EMF to be higher, or the wire resistance distribution to be different.

Corrected approach: The balance condition requires a higher potential gradient. With the given values, balance would occur if the wire resistance per cm is recalculated. Let us use: potential at 60 cm = (resistance of 60 cm / total circuit resistance) x EMF. Resistance of 60 cm = 10 x 0.6 = 6 ohm. At null: 1.2 = I x 6 = [2/(11 + RextR_{ext})] x 6. 1.2(11 + RextR_{ext}) = 12 → 11 + RextR_{ext} = 10.

Since total resistance cannot be less than wire + internal = 11 ohm, this means RextR_{ext} is not needed and the balance cannot occur at 60 cm with these exact parameters. In the exam, this would indicate RextR_{ext} = 0 and the balance length is recalculated: l = 1.2 x 11 x 100/(2 x 10) = 66 cm. This is a common trick: check if the parameters are self-consistent before solving.

For the intended solution type: If the driver EMF were 3 V (r = 1 ohm), then 1.2 = [3/(11 + RextR_{ext})] x 6 gives 11 + RextR_{ext} = 15, so RextR_{ext} = 4 ohm. This demonstrates the importance of checking parameter consistency in potentiometer problems.

Key Testable Concept

For the intended solution type: If the driver EMF were 3 V (r = 1 ohm), then 1.2 = [3/(11 + R_ext)] x 6 gives 11 + R_ext = 15, so R_ext = 4 ohm. **This demonstrates the importance of checking parameter consistency in potentiometer problems.**

Comparison Tables

A) Formula Table — Current & Resistance

QuantityFormulaVariables (physical meaning)Dimensional FormulaSI Unit
CurrentI = Q/t = neAvdQ = charge, t = time, n = number density, A = area, vd = drift velocity[A]ampere (A)
Drift velocityvd = eE τ\tau/m = I/(neA)e = electron charge, E = electric field, τ\tau = relaxation time, m = electron mass[L T1T^{-1}]m/s
ResistanceR = ρ\rho l/A = V/Iρ\rho = resistivity, l = length, A = area[M L2  T3  A2L^{2} \; T^{-3} \; A^{-2}]ohm
Resistivityρ\rho = RA/lR = resistance, A = area, l = length[M L3  T3  A2L^{3} \; T^{-3} \; A^{-2}]ohm m
Conductivityσ\sigma = 1/ρ\rhoreciprocal of resistivity[M1  L3  T3  A2M^{-1} \; L^{-3} \; T^{3} \; A^{2}]S/m
Current densityJ = I/A = nevd = σ\sigma EI = current, A = area[A L2L^{-2}]A/m2m^{2}
PowerP = VI = I2I^{2} R = V2V^{2}/RV = voltage, I = current, R = resistance[M L2  T3L^{2} \; T^{-3}]watt (W)
Electrical energyW = VIt = PtV = voltage, I = current, t = time[M L2  T2L^{2} \; T^{-2}]joule (J)

B) Kirchhoff's Laws Sign Convention Table

ElementDirection of TraversalSign of Potential ChangeExample
Resistor RIn direction of current I-IR (potential drops)Moving from A to B with current A to B: Δ\Delta V = -IR
Resistor RAgainst direction of current I+IR (potential rises)Moving from B to A with current A to B: Δ\Delta V = +IR
Cell (EMF ϵ\epsilon)From - to + terminal+ϵ\epsilon (potential rises)Traversing through cell from negative to positive terminal
Cell (EMF ϵ\epsilon)From + to - terminal-ϵ\epsilon (potential drops)Traversing through cell from positive to negative terminal
Internal resistance rIn direction of current-IrPotential drop inside the cell

C) Bridge & Potentiometer Formulas

InstrumentFormulaConditionWhat It MeasuresKey Advantage
Wheatstone bridgeP/Q = R/SIg = 0 (balanced)Unknown resistance (if 3 are known)High precision null method
Metre bridgeR/S = l/(100 - l)Ig = 0 (null point)Unknown resistanceSimple, uses uniform wire
Potentiometer (EMF comparison)ϵ1ϵ2\frac{\epsilon_{1}}{\epsilon_{2}} = l1l2\frac{l_{1}}{l_{2}}Null point for each cellCompares EMFs accuratelyNo current through cell at null — measures TRUE EMF
Potentiometer (internal resistance)r = R(l1l_{1} - l2l_{2})/l2l_{2}Two null-point readingsInternal resistance of cellNon-destructive measurement

D) Temperature Coefficient

Material TypeSign of α\alphaExampleBehavior with Temperature
MetalsPositive (α\alpha > 0)Cu, Al, FeResistance increases with temperature
SemiconductorsNegative (α\alpha < 0)Si, GeResistance decreases with temperature
Alloys (manganin, constantan)Very small α\alpha (~0)Manganin, NichromeResistance nearly constant with temperature
InsulatorsNegative (α\alpha < 0)Glass, rubberResistance decreases with temperature

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